spb80n06s-08 spi80n06s-08, SPP80N06S-08 sip mos ? power-transistor features ? n-channel - normal level -enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature green package ? avalanche test ? repetive avalanche up to t jmax = 175 c v dd =30?v, i d =80?a, v gs =10?v, r g =2.4 w ? d v /d t rated t c =25?c, v gs =10?v t c =100?c, v gs =10?v maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25?c, v gs =10?v 80 a t c =100?c, v gs =10?v 80 pulsed drain current 2) i d,pulse t c =25?c 320 avalanche energy, single pulse e as i d =80?a, r gs =25? w , v dd =25 v 700 mj avalanche energy, periodic 2) e ar t j =175 c 30 reverse diode d v /d t 2) d v /d t i d =80?a, v ds =40?v, d i /d t =200?a/s, t j,max =175?c 6 kv/s gate source voltage v gs 20 v power dissipation p tot t c =25?c 300 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 55 v r ds(on),max (smd version) 7.7 m w i d 80 a product summary pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 type package ordering code marking spb80n06s-08 pg-to263-3-2 sp0000-84808 1n0608 spi80n06s-08 pg-to262-3-1 sp0000-82518 1n0608 SPP80N06S-08 pg-to220-3-1 sp0000-84809 1n0608 rev. 1.0 page 1 2005-06-28
spb80n06s-08 spi80n06s-08, SPP80N06S-08 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - 0.38 0.5 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb r thja minimal footprint - - 62 6 cm2 cooling area 3) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0?v, i d =1?ma 55 - - v gate threshold voltage v gs(th) v ds = v gs , i d =240?a 2.1 3.0 4 zero gate voltage drain current i dss v ds =25?v, v gs =0?v, t j =25?c - 0.1 1 a v ds =25?v, v gs =0?v, t j =150?c 2) - 10 100 gate-source leakage current i gss v gs =20?v, v ds =0?v - 10 100 na drain-source on-state resistance r ds(on) v gs =10?v, i d =80?a - 6.5 8 m w v gs =10?v, i d =80?a smd version - 6.2 7.7 transconductance 2) g fs | v ds |>2| i d | r ds(on)max , i d =80?a - 73 - s footnote on page 3 values rev. 1.0 page 2 2005-06-28
spb80n06s-08 spi80n06s-08, SPP80N06S-08 parameter symbol conditions unit min. typ. max. dynamic characteristics 2) input capacitance c iss - 3660 - pf output capacitance c oss - 1075 - reverse transfer capacitance c rss - 540 - turn-on delay time t d(on) - 22 - ns rise time t r - 53 - turn-off delay time t d(off) - 54 - fall time t f - 32 - gate charge characteristics 2) gate to source charge q gs - 19 - nc gate to drain charge q gd - 62 - gate charge total q g - 125 187 gate plateau voltage v plateau - 5.4 - v reverse diode 2) diode continous forward current i s - - 80 a diode pulse current i s,pulse - - 320 diode forward voltage v sd v gs =0?v, i f =80?a, t j =25?c - 0.9 1.3 v reverse recovery time t rr v r =27.5?v, i f = i s , d i f /d t =100?a/s - 105 ns reverse recovery charge q rr - 30 - nc values v gs =0?v, v ds =25?v, f =1?mhz v dd =30?v, i d =80?a, v gs =10?v, r g =2.4 w v dd =44?v, i d =80?a, v gs =0?to?10?v 1) current is limited by bondwire; with an r thjc =0.5 k/w the chip is able to carry 132a at 25c. for detailed information see application note apps071e at www.infineon.com/optimos 2) defined by design not subjected to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. t c =25?c rev. 1.0 page 3 2005-06-28
spb80n06s-08 spi80n06s-08, SPP80N06S-08 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs =10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 10 s 100 s 1 ms 10 ms dc 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 t p [s] z thjc [k/w] 0 50 100 150 200 250 300 350 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [a] rev. 1.0 page 4 2005-06-28
spb80n06s-08 spi80n06s-08, SPP80N06S-08 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j v 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 0 5 10 15 20 25 0 20 40 60 80 100 120 i d [a] r ds(on) [m w ] 0 10 20 30 40 50 60 70 80 0 20 40 60 80 i d [a] g fs [s] 4.5 v 5 v 5.5 v 6 v 6.5 v v 7 v 8 v 10 0 20 40 60 80 100 120 140 160 0 1 2 3 v ds [v] i d [a] 25 c 175 c 0 20 40 60 80 100 120 140 160 0 2 4 6 8 v gs [v] i d [a] rev. 1.0 page 5 2005-06-28
spb80n06s-08 spi80n06s-08, SPP80N06S-08 9 typical drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =80 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j 0 2 4 6 8 10 12 14 16 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m w ] a 240 a 1200 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 0 10 20 30 40 v ds [v] c [pf] 25 c 175 c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] rev. 1.0 page 6 2005-06-28
spb80n06s-08 spi80n06s-08, SPP80N06S-08 13 typ. avalanche characteristics 14 typ. avalanche energy i as =f( t av ); r gs =25 w e as =f( t j ); v dd = 25 v; r gs =25 w parameter: t j(start) parameter: i d 15 typ. gate charge 16 drain-source breakdown voltage v gs =f( q gate ); i d =80 a pulsed v br(dss) =f( t j ); i d =250 a parameter: v dd c 25 c 100 c 150 1 10 100 1 10 100 1000 t av [s] i av [a] 50 52 54 56 58 60 62 64 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v 11 v 44 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 q gate [nc] v gs [v] 80 a 0 100 200 300 400 500 600 700 800 0 50 100 150 200 t j [c] e as [mj] rev. 1.0 page 7 2005-06-28
spb80n06s-08 spi80n06s-08, SPP80N06S-08 published by infineon technologies ag st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 2004 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 8 2005-06-28
|
